Raman analysis of Al xGa 1-xN films

Leah Bergman, Mitra Dutta, Michael D. Bremser, Ok Hyun Nam, William G. Perry, Dimitri Alexon, Robert F. Davis, Cengiz M. Balkas, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Raman analysis of the E2 mode of Al xGa 1-xN in the composition range 0≤x≤1 is presented. The lineshape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the lineshape. The model calculations also indicate the lack of a long-range order in the CVD (chemical vapor deposition) alloys. These results were confirmed by X-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x to approximately 0.5 indicative of a random disordered alloy system. The stress state of the alloys was found to be tensile and was attributed to the difference in the thermal expansion coefficients of the SiC substrate and the film.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997


OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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