@inproceedings{c8ee7788dc4843e68990d5a72602f396,
title = "Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures",
abstract = "Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-p.m-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.",
keywords = "Cadmium compounds, II-VI semiconductor materials, Photoluminescence, Photovoltaic cells, Thin films",
author = "Yuan Zhao and Zhao, {Xin Hao} and Zhang, {Yong Hang}",
note = "Funding Information: This work was supported in part by the DOE/Bay Area Photovoltaic Consortium program under Award DEEE0004946 and by the Air Force Office of Scientific Research under Grant FA9550-12-1-0444. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366054",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2637--2641",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}