@inproceedings{65d2d1d0ddca439e8d298d70dc6d77df,
title = "Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures",
abstract = "Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency (ηext) of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.",
keywords = "II-VI semiconductor materials, cadmium compounds, photoluminescence, photovoltaic cells, thin films",
author = "Yuan Zhao and Zhao, {Xin Hao} and Yong-Hang Zhang",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749654",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "545--548",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
}