Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures

Yuan Zhao; Xin Hao Zhao; Yong Hang Zhang

doi:10.1109/JPHOTOV.2017.2655724

Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures

Yuan Zhao, Xin Hao Zhao, Yong Hang Zhang

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Monocrystalline CdTe/MgCdTe double-heterostruc-tures (DHs) grown on lattice-matched InSb substrates have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this paper, external luminescence quantum efficiencies η_ext of CdTe/MgCdTe DHs are determined using photoluminescence quantum efficiency measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH with indium-doped n-type at 1 × 10¹⁷ cm^-3 is measured to be 3.0% under one-sun condition, i.e., a carrier injection current density of ∼30 mA/cm², which corresponds to a spontaneous emission quantum efficiency η_q of 90 ± 4%. Such a high efficiency gives an implied open-circuit voltage V_oc, or quasi-Fermi-level splitting of 1.13 V. The η_q of unintentionally doped DH samples with optimum barrier layers can be over 95% at one-sun injection level.

Original language	English (US)
Article number	7842549
Pages (from-to)	690-694
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	7
Issue number	2
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2655724
State	Published - Mar 2017

Keywords

II-VI semiconductor materials
cadmium compounds
photoluminescence
photovoltaic (PV) cells
thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2017.2655724

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@article{bba8e5a7996c4a239f797e8b0a49e538,

title = "Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures",

abstract = "Monocrystalline CdTe/MgCdTe double-heterostruc-tures (DHs) grown on lattice-matched InSb substrates have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this paper, external luminescence quantum efficiencies ηext of CdTe/MgCdTe DHs are determined using photoluminescence quantum efficiency measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH with indium-doped n-type at 1 × 1017 cm-3 is measured to be 3.0% under one-sun condition, i.e., a carrier injection current density of ∼30 mA/cm2, which corresponds to a spontaneous emission quantum efficiency ηq of 90 ± 4%. Such a high efficiency gives an implied open-circuit voltage Voc, or quasi-Fermi-level splitting of 1.13 V. The ηq of unintentionally doped DH samples with optimum barrier layers can be over 95% at one-sun injection level.",

keywords = "II-VI semiconductor materials, cadmium compounds, photoluminescence, photovoltaic (PV) cells, thin films",

author = "Yuan Zhao and Zhao, {Xin Hao} and Zhang, {Yong Hang}",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2017",

month = mar,

doi = "10.1109/JPHOTOV.2017.2655724",

language = "English (US)",

volume = "7",

pages = "690--694",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "2",

}

TY - JOUR

T1 - Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures

AU - Zhao, Yuan

AU - Zhao, Xin Hao

AU - Zhang, Yong Hang

PY - 2017/3

Y1 - 2017/3

N2 - Monocrystalline CdTe/MgCdTe double-heterostruc-tures (DHs) grown on lattice-matched InSb substrates have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this paper, external luminescence quantum efficiencies ηext of CdTe/MgCdTe DHs are determined using photoluminescence quantum efficiency measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH with indium-doped n-type at 1 × 1017 cm-3 is measured to be 3.0% under one-sun condition, i.e., a carrier injection current density of ∼30 mA/cm2, which corresponds to a spontaneous emission quantum efficiency ηq of 90 ± 4%. Such a high efficiency gives an implied open-circuit voltage Voc, or quasi-Fermi-level splitting of 1.13 V. The ηq of unintentionally doped DH samples with optimum barrier layers can be over 95% at one-sun injection level.

AB - Monocrystalline CdTe/MgCdTe double-heterostruc-tures (DHs) grown on lattice-matched InSb substrates have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this paper, external luminescence quantum efficiencies ηext of CdTe/MgCdTe DHs are determined using photoluminescence quantum efficiency measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH with indium-doped n-type at 1 × 1017 cm-3 is measured to be 3.0% under one-sun condition, i.e., a carrier injection current density of ∼30 mA/cm2, which corresponds to a spontaneous emission quantum efficiency ηq of 90 ± 4%. Such a high efficiency gives an implied open-circuit voltage Voc, or quasi-Fermi-level splitting of 1.13 V. The ηq of unintentionally doped DH samples with optimum barrier layers can be over 95% at one-sun injection level.

KW - II-VI semiconductor materials

KW - cadmium compounds

KW - photoluminescence

KW - photovoltaic (PV) cells

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85011983311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85011983311&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2017.2655724

DO - 10.1109/JPHOTOV.2017.2655724

M3 - Article

AN - SCOPUS:85011983311

SN - 2156-3381

VL - 7

SP - 690

EP - 694

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 2

M1 - 7842549

ER -

Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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