Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures

Yuan Zhao, Xin Hao Zhao, Yong Hang Zhang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Monocrystalline CdTe/MgCdTe double-heterostruc-tures (DHs) grown on lattice-matched InSb substrates have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this paper, external luminescence quantum efficiencies ηext of CdTe/MgCdTe DHs are determined using photoluminescence quantum efficiency measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH with indium-doped n-type at 1 × 1017 cm-3 is measured to be 3.0% under one-sun condition, i.e., a carrier injection current density of ∼30 mA/cm2, which corresponds to a spontaneous emission quantum efficiency ηq of 90 ± 4%. Such a high efficiency gives an implied open-circuit voltage Voc, or quasi-Fermi-level splitting of 1.13 V. The ηq of unintentionally doped DH samples with optimum barrier layers can be over 95% at one-sun injection level.

Original languageEnglish (US)
Article number7842549
Pages (from-to)690-694
Number of pages5
JournalIEEE Journal of Photovoltaics
Issue number2
StatePublished - Mar 2017


  • II-VI semiconductor materials
  • cadmium compounds
  • photoluminescence
  • photovoltaic (PV) cells
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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