Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node

Trevor Thornton; William Lepkowski; Seth J. Wilk; Michael Goryll; Bo Chen; Jason Kam; Bertan Bakkaloglu; Keith Holbert

doi:10.1109/REDW.2013.6658204

Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node

Trevor Thornton, William Lepkowski, Seth J. Wilk, Michael Goryll, Bo Chen, Jason Kam, Bertan Bakkaloglu, Keith Holbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

Original language	English (US)
Title of host publication	2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
DOIs	https://doi.org/10.1109/REDW.2013.6658204
State	Published - 2013
Event	2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States Duration: Jul 8 2013 → Jul 12 2013

Publication series

Name	IEEE Radiation Effects Data Workshop

Other

Other	2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
Country/Territory	United States
City	San Francisco, CA
Period	7/8/13 → 7/12/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation
Nuclear and High Energy Physics

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10.1109/REDW.2013.6658204

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Thornton, T., Lepkowski, W., Wilk, S. J., Goryll, M., Chen, B., Kam, J., Bakkaloglu, B., & Holbert, K. (2013). Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. In 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 Article 6658204 (IEEE Radiation Effects Data Workshop). https://doi.org/10.1109/REDW.2013.6658204

Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. / Thornton, Trevor; Lepkowski, William; Wilk, Seth J. et al.
2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013. 2013. 6658204 (IEEE Radiation Effects Data Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Thornton, T, Lepkowski, W, Wilk, SJ, Goryll, M, Chen, B, Kam, J, Bakkaloglu, B & Holbert, K 2013, Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. in 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013., 6658204, IEEE Radiation Effects Data Workshop, 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013, San Francisco, CA, United States, 7/8/13. https://doi.org/10.1109/REDW.2013.6658204

Thornton T, Lepkowski W, Wilk SJ, Goryll M, Chen B, Kam J et al. Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. In 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013. 2013. 6658204. (IEEE Radiation Effects Data Workshop). doi: 10.1109/REDW.2013.6658204

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title = "Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node",

abstract = "A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).",

author = "Trevor Thornton and William Lepkowski and Wilk, {Seth J.} and Michael Goryll and Bo Chen and Jason Kam and Bertan Bakkaloglu and Keith Holbert",

year = "2013",

doi = "10.1109/REDW.2013.6658204",

language = "English (US)",

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AU - Thornton, Trevor

AU - Lepkowski, William

AU - Wilk, Seth J.

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AU - Chen, Bo

AU - Kam, Jason

AU - Bakkaloglu, Bertan

AU - Holbert, Keith

PY - 2013

Y1 - 2013

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AB - A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

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AN - SCOPUS:84892163608

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T3 - IEEE Radiation Effects Data Workshop

BT - 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013

T2 - 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013

Y2 - 8 July 2013 through 12 July 2013

ER -

Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node

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