@inproceedings{16f87183335d43a198746d08fcd7c02c,
title = "Radiation-induced Enhancement of Scattering Effects in FD-SOI MOSFETs",
abstract = "Experimental results show a radiation response in 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keVx-rays. A degradation in the mobility is observed as a function of radiation. The mobility degradation is shown to be position dependent by testing at different back gate biases. The method used to extract mobility from drain current is shown. Quantum mechanical simulations were performed to show the shift in the charge centroid with varying back gate bias.",
keywords = "FDSOI, mobility, total ionizing dose",
author = "Matthew Spear and Mamun, {Fahad Al} and Jose Solano and Barnaby, {Hugh J.} and Esqueda, {Ivan Sanchez}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 22nd European Conference on Radiation and Its Effects on Components and Systems, RADECS 2022 ; Conference date: 03-10-2022 Through 07-10-2022",
year = "2022",
doi = "10.1109/RADECS55911.2022.10412589",
language = "English (US)",
series = "RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems",
}