Radiation-induced base current broadening mechanisms in gated bipolar devices

X. J. Chen, H. J. Barnaby, Ronald L. Pease, R. D. Schrimpf, Dale G. Platteter, G. Dunham

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.

Original languageEnglish (US)
Pages (from-to)3178-3185
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6 II
StatePublished - Dec 2004
Externally publishedYes


  • Bipolar
  • Energy distribution
  • Gated devices
  • Interface traps
  • Ionization
  • Radiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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