Quantum wire FETs in δ-doped GaAs

Y. Feng, T. J. Thornton, Mino Green, J. J. Harris

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We have used in-plane gates to produce quantum wire FETs from δ - doped GaAs. Two side gates are separated from a narrow channel by trenches patterned by electron beam lithography and reactive ion etching with BCl3. Applying a reverse bias to the gates increases the resistivity of the wire which pinches off at voltages below -7 Volts. The large electron density in the wire drastically reduces the surface depletion and as a result the electrical width at zero gate bias corresponds to the structural width. The wires are characterised in terms of width, electron density and phase coherence length by means of low temperature magnetotransport measurements. The pinch-off characteristics and depletion mechanism are also discussed.

Original languageEnglish (US)
Pages (from-to)281-284
Number of pages4
JournalSuperlattices and Microstructures
Issue number3
StatePublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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