Quantum dots in In.47Ga.53AsInAlAsInP heterostructures

K. Kern, T. Demel, D. Heitmann, P. Grambow, Y. H. Zhang, K. Ploog

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Quantum dots with geometrical diameter of about 400 nm have been prepared by deep mesa etching starting from modulation doped InGaAsInAlAsInP heterostructures. From microwave and far infrared (FIR) transmission experiments we find that the dots contain about 600 electrons per dot on discrete quantum confined energy levels with 1 meV separation. The FIR response is strongly governed by collective effects and shows in a magnetic field a complex mode structure.

Original languageEnglish (US)
Pages (from-to)11-14
Number of pages4
JournalSuperlattices and Microstructures
Issue number1
StatePublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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