Quantum dots in In.47Ga.53AsInAlAsInP heterostructures

K. Kern; T. Demel; D. Heitmann; P. Grambow; Y. H. Zhang; K. Ploog

doi:10.1016/0749-6036(91)90083-4

Quantum dots in In_.47Ga_.53AsInAlAsInP heterostructures

K. Kern, T. Demel, D. Heitmann, P. Grambow, Y. H. Zhang, K. Ploog

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Quantum dots with geometrical diameter of about 400 nm have been prepared by deep mesa etching starting from modulation doped InGaAsInAlAsInP heterostructures. From microwave and far infrared (FIR) transmission experiments we find that the dots contain about 600 electrons per dot on discrete quantum confined energy levels with 1 meV separation. The FIR response is strongly governed by collective effects and shows in a magnetic field a complex mode structure.

Original language	English (US)
Pages (from-to)	11-14
Number of pages	4
Journal	Superlattices and Microstructures
Volume	9
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(91)90083-4
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Quantum dots in In.47Ga.53AsInAlAsInP heterostructures",

abstract = "Quantum dots with geometrical diameter of about 400 nm have been prepared by deep mesa etching starting from modulation doped InGaAsInAlAsInP heterostructures. From microwave and far infrared (FIR) transmission experiments we find that the dots contain about 600 electrons per dot on discrete quantum confined energy levels with 1 meV separation. The FIR response is strongly governed by collective effects and shows in a magnetic field a complex mode structure.",

author = "K. Kern and T. Demel and D. Heitmann and P. Grambow and Zhang, {Y. H.} and K. Ploog",

year = "1991",

doi = "10.1016/0749-6036(91)90083-4",

language = "English (US)",

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TY - JOUR

T1 - Quantum dots in In.47Ga.53AsInAlAsInP heterostructures

AU - Kern, K.

AU - Demel, T.

AU - Heitmann, D.

AU - Grambow, P.

AU - Zhang, Y. H.

AU - Ploog, K.

PY - 1991

Y1 - 1991

N2 - Quantum dots with geometrical diameter of about 400 nm have been prepared by deep mesa etching starting from modulation doped InGaAsInAlAsInP heterostructures. From microwave and far infrared (FIR) transmission experiments we find that the dots contain about 600 electrons per dot on discrete quantum confined energy levels with 1 meV separation. The FIR response is strongly governed by collective effects and shows in a magnetic field a complex mode structure.

AB - Quantum dots with geometrical diameter of about 400 nm have been prepared by deep mesa etching starting from modulation doped InGaAsInAlAsInP heterostructures. From microwave and far infrared (FIR) transmission experiments we find that the dots contain about 600 electrons per dot on discrete quantum confined energy levels with 1 meV separation. The FIR response is strongly governed by collective effects and shows in a magnetic field a complex mode structure.

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U2 - 10.1016/0749-6036(91)90083-4

DO - 10.1016/0749-6036(91)90083-4

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Quantum dots in In_.47Ga_.53AsInAlAsInP heterostructures

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