Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Shinya Yamakawa, Stephen Goodnick, Shela Aboud, Marco Saraniti

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


A full-band Cellular Monte Carlo (CMC) approach is applied to the simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The best fit Gaussian parameters of the effective potential method for different Al contents and gate biases are calculated from the equilibrium electron density. The extracted parameters are used for quantum corrections included in the full-band CMC device simulator. The charge set-back from the interface is clearly observed. However, the overall current of the device is close to the classical solution due to the dominance of polarization charge.

Original languageEnglish (US)
Pages (from-to)299-303
Number of pages5
JournalJournal of Computational Electronics
Issue number3-4
StatePublished - Oct 2004


  • AlGaN/GaN HEMT
  • Cellular Monte Carlo
  • Effective potential
  • Quantum correction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


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