Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells

John R. Jameson, Nad Gilbert, Foroozan Koushan, Juan Saenz, Janet Wang, Shane Hollmer, Michael Kozicki, Narbeh Derhacobian

Research output: Contribution to journalArticlepeer-review

80 Scopus citations


Ag/GeS 2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G 0 = 2e 2/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G 0 = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.

Original languageEnglish (US)
Article number6122486
Pages (from-to)257-259
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2012
Externally publishedYes


  • Conductive-bridge memory
  • conductive-bridge random access memory (CBRAM)
  • germanium sulfide
  • nonvolatile memory
  • quantized conductance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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