Abstract
Ag/GeS 2/W conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance G 0 = 2e 2/h. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on-state resistances on the order of 1/G 0 = 12.9 kΩ or less, quantization implies that the Ag conductive bridge typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.
Original language | English (US) |
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Article number | 6122486 |
Pages (from-to) | 257-259 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 33 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2012 |
Externally published | Yes |
Keywords
- Conductive-bridge memory
- conductive-bridge random access memory (CBRAM)
- germanium sulfide
- nonvolatile memory
- quantized conductance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering