Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

M. K. Shakfa; D. Kalincev; X. Lu; Shane Johnson; D. A. Beaton; T. Tiedje; A. Chernikov; S. Chatterjee; M. Koch

doi:10.1063/1.4826621

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

M. K. Shakfa, D. Kalincev, X. Lu, Shane Johnson, D. A. Beaton, T. Tiedje, A. Chernikov, S. Chatterjee, M. Koch

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33 Scopus citations

Abstract

Localization effects on the optical properties of GaAs_1- _xBi_x/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

Original language	English (US)
Article number	164306
Journal	Journal of Applied Physics
Volume	114
Issue number	16
DOIs	https://doi.org/10.1063/1.4826621
State	Published - Oct 28 2013

ASJC Scopus subject areas

General Physics and Astronomy

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@article{4d20a471c40b4ca9ba79a69ce4b07c5e,

title = "Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells",

abstract = "Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.",

author = "Shakfa, {M. K.} and D. Kalincev and X. Lu and Shane Johnson and Beaton, {D. A.} and T. Tiedje and A. Chernikov and S. Chatterjee and M. Koch",

note = "Funding Information: The Marburg Group gratefully acknowledges financial support through the Research Training Group 1782 -Functionalization of Semiconductors by the German Science Foundation (DFG).",

year = "2013",

month = oct,

day = "28",

doi = "10.1063/1.4826621",

language = "English (US)",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "16",

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TY - JOUR

T1 - Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

AU - Shakfa, M. K.

AU - Kalincev, D.

AU - Lu, X.

AU - Johnson, Shane

AU - Beaton, D. A.

AU - Tiedje, T.

AU - Chernikov, A.

AU - Chatterjee, S.

AU - Koch, M.

N1 - Funding Information: The Marburg Group gratefully acknowledges financial support through the Research Training Group 1782 -Functionalization of Semiconductors by the German Science Foundation (DFG).

PY - 2013/10/28

Y1 - 2013/10/28

N2 - Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

AB - Localization effects on the optical properties of GaAs1- xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

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U2 - 10.1063/1.4826621

DO - 10.1063/1.4826621

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VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 16

M1 - 164306

ER -

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Abstract

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