Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)

Hongbin Yu; C. S. Jiang; X. D. Wang; Qian Niu; C. K. Shih; Ph Ebert; J. M. White; J. M. White; C. K. Shih; J. M. White; Qian Niu; C. K. Shih; Zhenyu Zhang

doi:10.1103/PhysRevLett.88.016102

Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)

Hongbin Yu, C. S. Jiang, X. D. Wang, Qian Niu, C. K. Shih, Ph Ebert, J. M. White, J. M. White, C. K. Shih, J. M. White, Qian Niu, C. K. Shih, Zhenyu Zhang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

Original language	English (US)
Pages (from-to)	4
Number of pages	1
Journal	Physical Review Letters
Volume	88
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.88.016102
State	Published - 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.88.016102

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title = "Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)",

abstract = "Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.",

author = "Hongbin Yu and Jiang, {C. S.} and Wang, {X. D.} and Qian Niu and Shih, {C. K.} and Ph Ebert and White, {J. M.} and White, {J. M.} and Shih, {C. K.} and White, {J. M.} and Qian Niu and Shih, {C. K.} and Zhenyu Zhang",

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doi = "10.1103/PhysRevLett.88.016102",

language = "English (US)",

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TY - JOUR

T1 - Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)

AU - Yu, Hongbin

AU - Jiang, C. S.

AU - Wang, X. D.

AU - Niu, Qian

AU - Shih, C. K.

AU - Ebert, Ph

AU - White, J. M.

AU - Shih, C. K.

AU - White, J. M.

AU - Niu, Qian

AU - Shih, C. K.

AU - Zhang, Zhenyu

PY - 2002

Y1 - 2002

N2 - Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

AB - Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

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DO - 10.1103/PhysRevLett.88.016102

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SP - 4

JO - Physical Review Letters

JF - Physical Review Letters

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ER -

Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)

Abstract

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