Abstract
The layer resolved metastability of flat silver overlayers on GaAs was quantitatively determined using scanning tunneling microscopy. The kinetic barrier the initial system had to overcome to transform from the wetting to nonwetting morphology was calculated. Experiments were performed in an ultrahigh vacuum system and Ag films were deposited on in situ cleaved GaAs surfaces at temperatures below 140 K, followed by annealing to room temperature. Results indicated that the metastable configuration of the Ag overlayer was defined by the quantum nature of the conduction electrons confined within the overlayer.
| Original language | English (US) |
|---|---|
| Article number | 016102 |
| Pages (from-to) | 161021-161024 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 88 |
| Issue number | 1 |
| State | Published - Jan 7 2002 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)