Proton radiation response mechanisms in bipolar analog circuits

Hugh J. Barnaby, Ron D. Schrimpf, Andrew L. Sternberg, Vincent Berthe, Claude R. Cirba, Ron L. Pease

Research output: Contribution to journalConference articlepeer-review

66 Scopus citations


The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton responses of the LM124 and LM148 operational amplifiers. The data also reveal that the electrical responses of these circuits and their input transistors to the combined effects of displacement damage and defects introduced by ionizing radiation are nonlinear. Analysis, supported by device simulation, shows that shifts in device parameters (surface potentials, carrier concentrations, etc.) caused by the buildup of oxide and interfacial defects affect the recombination rate due to traps resulting from displacement damage in the bulk silicon. This non-linearity complicates the analysis of proton radiation effects and can have a significant impact on the qualification of analog parts for use in space environments.

Original languageEnglish (US)
Pages (from-to)2074-2080
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number6 I
StatePublished - Dec 2001
Externally publishedYes
Event2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Canada
Duration: Jul 16 2001Jul 20 2001


  • Bipolar junction transistors
  • Bulk lifetime
  • Displacement damage
  • Interface traps
  • Ionization damage
  • NIEL
  • Neutrons
  • Operational amplifiers
  • Oxide trapped charge
  • PFET
  • Protons
  • Surface recombination velocity
  • X-rays

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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