Proton radiation response mechanisms in bipolar analog circuits

Hugh J. Barnaby; Ron D. Schrimpf; Andrew L. Sternberg; Vincent Berthe; Claude R. Cirba; Ron L. Pease

doi:10.1109/23.983175

Proton radiation response mechanisms in bipolar analog circuits

Hugh J. Barnaby, Ron D. Schrimpf, Andrew L. Sternberg, Vincent Berthe, Claude R. Cirba, Ron L. Pease

Research output: Contribution to journal › Conference article › peer-review

67 Scopus citations

Abstract

The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton responses of the LM124 and LM148 operational amplifiers. The data also reveal that the electrical responses of these circuits and their input transistors to the combined effects of displacement damage and defects introduced by ionizing radiation are nonlinear. Analysis, supported by device simulation, shows that shifts in device parameters (surface potentials, carrier concentrations, etc.) caused by the buildup of oxide and interfacial defects affect the recombination rate due to traps resulting from displacement damage in the bulk silicon. This non-linearity complicates the analysis of proton radiation effects and can have a significant impact on the qualification of analog parts for use in space environments.

Original language	English (US)
Pages (from-to)	2074-2080
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	48
Issue number	6 I
DOIs	https://doi.org/10.1109/23.983175
State	Published - Dec 2001
Externally published	Yes
Event	2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Canada Duration: Jul 16 2001 → Jul 20 2001

Keywords

Bipolar junction transistors
Bulk lifetime
Displacement damage
Interface traps
Ionization damage
NIEL
Neutrons
Operational amplifiers
Oxide trapped charge
PFET
Protons
Surface recombination velocity
X-rays

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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@article{30eda93867054a56b7b688f252a1dadf,

title = "Proton radiation response mechanisms in bipolar analog circuits",

abstract = "The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton responses of the LM124 and LM148 operational amplifiers. The data also reveal that the electrical responses of these circuits and their input transistors to the combined effects of displacement damage and defects introduced by ionizing radiation are nonlinear. Analysis, supported by device simulation, shows that shifts in device parameters (surface potentials, carrier concentrations, etc.) caused by the buildup of oxide and interfacial defects affect the recombination rate due to traps resulting from displacement damage in the bulk silicon. This non-linearity complicates the analysis of proton radiation effects and can have a significant impact on the qualification of analog parts for use in space environments.",

keywords = "Bipolar junction transistors, Bulk lifetime, Displacement damage, Interface traps, Ionization damage, NIEL, Neutrons, Operational amplifiers, Oxide trapped charge, PFET, Protons, Surface recombination velocity, X-rays",

author = "Barnaby, {Hugh J.} and Schrimpf, {Ron D.} and Sternberg, {Andrew L.} and Vincent Berthe and Cirba, {Claude R.} and Pease, {Ron L.}",

note = "Funding Information: Manuscript received July 17, 2001. This work was supported by DTRA and by the NASA GSRP program.; 2001 Nuclear and Sapce Radiation Effects Conference (NSREC) ; Conference date: 16-07-2001 Through 20-07-2001",

year = "2001",

month = dec,

doi = "10.1109/23.983175",

language = "English (US)",

volume = "48",

pages = "2074--2080",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 I",

}

TY - JOUR

T1 - Proton radiation response mechanisms in bipolar analog circuits

AU - Barnaby, Hugh J.

AU - Schrimpf, Ron D.

AU - Sternberg, Andrew L.

AU - Berthe, Vincent

AU - Cirba, Claude R.

AU - Pease, Ron L.

N1 - Funding Information: Manuscript received July 17, 2001. This work was supported by DTRA and by the NASA GSRP program.

PY - 2001/12

Y1 - 2001/12

N2 - The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton responses of the LM124 and LM148 operational amplifiers. The data also reveal that the electrical responses of these circuits and their input transistors to the combined effects of displacement damage and defects introduced by ionizing radiation are nonlinear. Analysis, supported by device simulation, shows that shifts in device parameters (surface potentials, carrier concentrations, etc.) caused by the buildup of oxide and interfacial defects affect the recombination rate due to traps resulting from displacement damage in the bulk silicon. This non-linearity complicates the analysis of proton radiation effects and can have a significant impact on the qualification of analog parts for use in space environments.

AB - The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton responses of the LM124 and LM148 operational amplifiers. The data also reveal that the electrical responses of these circuits and their input transistors to the combined effects of displacement damage and defects introduced by ionizing radiation are nonlinear. Analysis, supported by device simulation, shows that shifts in device parameters (surface potentials, carrier concentrations, etc.) caused by the buildup of oxide and interfacial defects affect the recombination rate due to traps resulting from displacement damage in the bulk silicon. This non-linearity complicates the analysis of proton radiation effects and can have a significant impact on the qualification of analog parts for use in space environments.

KW - Bipolar junction transistors

KW - Bulk lifetime

KW - Displacement damage

KW - Interface traps

KW - Ionization damage

KW - NIEL

KW - Neutrons

KW - Operational amplifiers

KW - Oxide trapped charge

KW - PFET

KW - Protons

KW - Surface recombination velocity

KW - X-rays

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DO - 10.1109/23.983175

M3 - Conference article

AN - SCOPUS:0035720330

SN - 0018-9499

VL - 48

SP - 2074

EP - 2080

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 I

T2 - 2001 Nuclear and Sapce Radiation Effects Conference (NSREC)

Y2 - 16 July 2001 through 20 July 2001

ER -

Proton radiation response mechanisms in bipolar analog circuits

Abstract

Keywords

ASJC Scopus subject areas

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