TY - GEN
T1 - Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas
AU - Boccard, Mathieu
AU - Rodkey, Nathan
AU - Holman, Zachary
N1 - Funding Information:
Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895.
Funding Information:
We acknowledge Reto Tscharner, Xavier Niquille and Sylvain Dunand for helpful discussions in refurbishing the sputtering tool. We also thank Prateek Garg and Peter Firth for the H2 control and Alec Jackson for RGA support. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335. This material is also based upon work supported in part by the Engineering Research Center Program of the National Science Foundation and the Office of Energy
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - We investigate the possibility of fabricating high- mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
AB - We investigate the possibility of fabricating high- mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
KW - Hydrogen
KW - Indium oxide
KW - Mobility
KW - Transparent conductive oxide
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U2 - 10.1109/PVSC.2017.8366672
DO - 10.1109/PVSC.2017.8366672
M3 - Conference contribution
AN - SCOPUS:85048490569
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 396
EP - 398
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -