Properties of homoepitaxially MBE-grown GaN

T. Suski, J. Krueger, C. Kisielowski, P. Phatak, M. S H Leung, Z. Liliental-Weber, A. Gassmann, Nathan Newman, M. D. Rubin, E. R. Weber, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, H. I. Helava

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metallorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996


OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Properties of homoepitaxially MBE-grown GaN'. Together they form a unique fingerprint.

Cite this