Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Michael Kozicki; M. Balakrishnan; C. Gopalan; C. Ratnakumar; M. Mitkova

doi:10.1109/NVMT.2005.1541405

Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Michael Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar, M. Mitkova

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

107 Scopus citations

Abstract

Programmable Metallization Cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. Our previous studies concentrated on electrolytes formed from silver-doped germanium selenide glasses but these materials are not able to withstand the temperatures used in standard back-end-of-line processing for the fabrication of CMOS integrated circuits. This paper concerns our more recent work on silver-doped germanium sulfide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at 300°C and 430°C. We also present results from devices that use copper in place of silver as this metal is currently used in integrated circuit interconnect.

Original language	English (US)
Title of host publication	2005 Non-Volatile Memory Technology Symposium, NVMTS05
Pages	83-89
Number of pages	7
DOIs	https://doi.org/10.1109/NVMT.2005.1541405
State	Published - 2005
Event	2005 Non-Volatile Memory Technology Symposium, NVMTS05 - Dallas, TX, United States Duration: Nov 7 2005 → Nov 10 2005

Other

Other	2005 Non-Volatile Memory Technology Symposium, NVMTS05
Country/Territory	United States
City	Dallas, TX
Period	11/7/05 → 11/10/05

Keywords

CMOS processing
Electrodeposltlon
Non-volatile memory
Resistance change
Solid electrolyte

ASJC Scopus subject areas

Engineering(all)

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10.1109/NVMT.2005.1541405

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Kozicki, M, Balakrishnan, M, Gopalan, C, Ratnakumar, C & Mitkova, M 2005, Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. in 2005 Non-Volatile Memory Technology Symposium, NVMTS05., 1541405, pp. 83-89, 2005 Non-Volatile Memory Technology Symposium, NVMTS05, Dallas, TX, United States, 11/7/05. https://doi.org/10.1109/NVMT.2005.1541405

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abstract = "Programmable Metallization Cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. Our previous studies concentrated on electrolytes formed from silver-doped germanium selenide glasses but these materials are not able to withstand the temperatures used in standard back-end-of-line processing for the fabrication of CMOS integrated circuits. This paper concerns our more recent work on silver-doped germanium sulfide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at 300°C and 430°C. We also present results from devices that use copper in place of silver as this metal is currently used in integrated circuit interconnect.",

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author = "Michael Kozicki and M. Balakrishnan and C. Gopalan and C. Ratnakumar and M. Mitkova",

year = "2005",

doi = "10.1109/NVMT.2005.1541405",

language = "English (US)",

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booktitle = "2005 Non-Volatile Memory Technology Symposium, NVMTS05",

note = "2005 Non-Volatile Memory Technology Symposium, NVMTS05 ; Conference date: 07-11-2005 Through 10-11-2005",

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AU - Kozicki, Michael

AU - Balakrishnan, M.

AU - Gopalan, C.

AU - Ratnakumar, C.

AU - Mitkova, M.

PY - 2005

Y1 - 2005

N2 - Programmable Metallization Cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. Our previous studies concentrated on electrolytes formed from silver-doped germanium selenide glasses but these materials are not able to withstand the temperatures used in standard back-end-of-line processing for the fabrication of CMOS integrated circuits. This paper concerns our more recent work on silver-doped germanium sulfide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at 300°C and 430°C. We also present results from devices that use copper in place of silver as this metal is currently used in integrated circuit interconnect.

AB - Programmable Metallization Cell (PMC) memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. Our previous studies concentrated on electrolytes formed from silver-doped germanium selenide glasses but these materials are not able to withstand the temperatures used in standard back-end-of-line processing for the fabrication of CMOS integrated circuits. This paper concerns our more recent work on silver-doped germanium sulfide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at 300°C and 430°C. We also present results from devices that use copper in place of silver as this metal is currently used in integrated circuit interconnect.

KW - CMOS processing

KW - Electrodeposltlon

KW - Non-volatile memory

KW - Resistance change

KW - Solid electrolyte

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BT - 2005 Non-Volatile Memory Technology Symposium, NVMTS05

T2 - 2005 Non-Volatile Memory Technology Symposium, NVMTS05

Y2 - 7 November 2005 through 10 November 2005

ER -

Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Abstract

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Keywords

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