Probing carrier lifetimes at dislocations in epitaxial CdTe

Kirstin Alberi, Brian Fluegel, Michael J. DiNezza, Shi Liu, Yong-Hang Zhang, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Dark line defects arising from dislocations in epitaxial CdTe films are known to strongly limit the overall performance of optoelectronic devices. However, their effect on carrier diffusion length and lifetime in the material immediately surrounding dislocations is not well quantified. We apply a photoluminescence imaging technique to directly measure these parameters in a CdTe/MgCdTe double heterostructure. Radiative recombination is reduced by up to 85% within 5 μm of the dislocation. Additionally, the carrier diffusion length and lifetime decrease by ∼50 and ∼80%, respectively.

Original languageEnglish (US)
Article number065503
JournalApplied Physics Express
Issue number6
StatePublished - Jun 2014

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Probing carrier lifetimes at dislocations in epitaxial CdTe'. Together they form a unique fingerprint.

Cite this