Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights

C. S. Gworek, P. Phatak, B. T. Jonker, E. R. Weber, Nathan Newman

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97±4 meV/GPa fall within the uncertainty of the pressure dependence of the AsGa defect and track the predicted value of AsGa-rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109±7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

Original languageEnglish (US)
Article number045322
Pages (from-to)453221-453226
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
StatePublished - Jul 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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