Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

Y. Y. Fang; J. Tolle; Andrew Chizmeshya; John Kouvetakis; V. R. D'Costa; Jose Menendez

doi:10.1063/1.3204456

Practical B and P doping via Six Sny Ge1-x-y-z M_z quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

Y. Y. Fang, J. Tolle, Andrew Chizmeshya, John Kouvetakis, V. R. D'Costa, Jose Menendez

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We describe the fabrication of B and P doped SiGeSn ternaries, lattice-matched to Ge, with compositions adjusted to independently tune the band gap. These are deposited at 320-350 °C with superior crystallinity and morphology via in situ reactions of diborane (p -type) and designer P (SiH ₃) ₃ and P (GeH₃) ₃ precursors (n -type). Device-level carrier concentrations in the 1019 - 1020 / cm3 range are produced yielding film resistivities and carrier mobilities comparable to those of Ge indicating negligible alloy scattering. High boron levels induce a significant and systematic contraction of the host lattice, which is compensated by an adjustment of the Sn/Si ratio in accord with a simple model based on Vegard's law, the mismatch of covalent radii of the constituents, and the absolute hydrostatic deformation potentials for the band edges.

Original language	English (US)
Article number	081113
Journal	Applied Physics Letters
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.3204456
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3204456

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title = "Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior",

abstract = "We describe the fabrication of B and P doped SiGeSn ternaries, lattice-matched to Ge, with compositions adjusted to independently tune the band gap. These are deposited at 320-350 °C with superior crystallinity and morphology via in situ reactions of diborane (p -type) and designer P (SiH 3) 3 and P (GeH3) 3 precursors (n -type). Device-level carrier concentrations in the 1019 - 1020 / cm3 range are produced yielding film resistivities and carrier mobilities comparable to those of Ge indicating negligible alloy scattering. High boron levels induce a significant and systematic contraction of the host lattice, which is compensated by an adjustment of the Sn/Si ratio in accord with a simple model based on Vegard's law, the mismatch of covalent radii of the constituents, and the absolute hydrostatic deformation potentials for the band edges.",

author = "Fang, {Y. Y.} and J. Tolle and Andrew Chizmeshya and John Kouvetakis and D'Costa, {V. R.} and Jose Menendez",

note = "Funding Information: In conclusion, our work highlights the significant impact of small B atoms on the SiGeSn structure suggesting that this system behaves in essence like a pseudo quaternary alloy involving dilute compositions of III elements in a group IV matrix. We note that a similar effect has been qualitative described in B doped ; however, direct measurements relating the concentration, structure and strain in these alloys have not been reported. This work was supported by AFOSR () amd DOE ().",

year = "2009",

doi = "10.1063/1.3204456",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

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T1 - Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge

T2 - Structural, electrical, and strain behavior

AU - Fang, Y. Y.

AU - Tolle, J.

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

AU - D'Costa, V. R.

AU - Menendez, Jose

N1 - Funding Information: In conclusion, our work highlights the significant impact of small B atoms on the SiGeSn structure suggesting that this system behaves in essence like a pseudo quaternary alloy involving dilute compositions of III elements in a group IV matrix. We note that a similar effect has been qualitative described in B doped ; however, direct measurements relating the concentration, structure and strain in these alloys have not been reported. This work was supported by AFOSR () amd DOE ().

PY - 2009

Y1 - 2009

N2 - We describe the fabrication of B and P doped SiGeSn ternaries, lattice-matched to Ge, with compositions adjusted to independently tune the band gap. These are deposited at 320-350 °C with superior crystallinity and morphology via in situ reactions of diborane (p -type) and designer P (SiH 3) 3 and P (GeH3) 3 precursors (n -type). Device-level carrier concentrations in the 1019 - 1020 / cm3 range are produced yielding film resistivities and carrier mobilities comparable to those of Ge indicating negligible alloy scattering. High boron levels induce a significant and systematic contraction of the host lattice, which is compensated by an adjustment of the Sn/Si ratio in accord with a simple model based on Vegard's law, the mismatch of covalent radii of the constituents, and the absolute hydrostatic deformation potentials for the band edges.

AB - We describe the fabrication of B and P doped SiGeSn ternaries, lattice-matched to Ge, with compositions adjusted to independently tune the band gap. These are deposited at 320-350 °C with superior crystallinity and morphology via in situ reactions of diborane (p -type) and designer P (SiH 3) 3 and P (GeH3) 3 precursors (n -type). Device-level carrier concentrations in the 1019 - 1020 / cm3 range are produced yielding film resistivities and carrier mobilities comparable to those of Ge indicating negligible alloy scattering. High boron levels induce a significant and systematic contraction of the host lattice, which is compensated by an adjustment of the Sn/Si ratio in accord with a simple model based on Vegard's law, the mismatch of covalent radii of the constituents, and the absolute hydrostatic deformation potentials for the band edges.

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Practical B and P doping via Six Sny Ge1-x-y-z M_z quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

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