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Post-irradiation-gate-stress on power MOSFETs: Quantification of latent defects-induced reliability degradation
A. Privat, A. D. Touboul, A. Michez, S. Bourdarie, J. R. Vaille, F. Wrobel, R. Arinero, N. Chatry, G. Chaumont, E. Lorfevre, F. Saigne
Research output: Contribution to journal › Article › peer-review
5
Scopus
citations