Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

J. N. Stirman; Fernando Ponce; A. Pavlovska; I. S T Tsong; David Smith

doi:10.1063/1.125596

Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

J. N. Stirman, Fernando Ponce, A. Pavlovska, I. S T Tsong, David Smith

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Abstract

High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (1100) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance.

Original language	English (US)
Pages (from-to)	822-824
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	7
DOIs	https://doi.org/10.1063/1.125596
State	Published - Feb 14 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125596

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abstract = "High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (1100) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance.",

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AU - Stirman, J. N.

AU - Ponce, Fernando

AU - Pavlovska, A.

AU - Tsong, I. S T

AU - Smith, David

PY - 2000/2/14

Y1 - 2000/2/14

N2 - High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (1100) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance.

AB - High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (1100) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance.

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Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

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