Physically Based Predictive Model for Single Event Transients in CMOS Gates

Mehdi Saremi, Aymeric Privat, Hugh Barnaby, Lawrence T. Clark

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


An analytical model is presented to understand the time response of an inverter to ionizing particles based on physical equations. The model divides the output voltage transient response of an inverter into three time segments, where an ionizing particle striking through the drain-body junction of the OFF-state nMOS is represented as a photocurrent pulse. If this current source is large enough, the output voltage can drop to a negative voltage. In this model, the OFF-state nMOS is represented as the parallel combination of an ideal diode and the intrinsic capacitance of the drain-body junction, while a resistance represents an ON-state pMOS. The proposed model is verified by 3-D TCAD mixed-mode device simulations. In order to investigate the flexibility of the model, the effects of important parameters, such as ON-state pMOS resistance, doping concentration of P-region in the diode, and the photocurrent pulse are scrutinized.

Original languageEnglish (US)
Article number7447778
Pages (from-to)2248-2254
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - Jun 2016


  • CMOS inverter
  • Physically based predictive model
  • Single event transient (SET)
  • TCAD mixed-mode device simulations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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