Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Zhi Yuan Lin; Jin Fan; Shi Liu; Yong-Hang Zhang

doi:10.1117/12.2177526

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Zhi Yuan Lin, Jin Fan, Shi Liu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm² to 20 W/cm². A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	9451
Edition	January
DOIs	https://doi.org/10.1117/12.2177526
State	Published - 2015
Event	41st Conference on Infrared Technology and Applications - Baltimore, United States Duration: Apr 20 2015 → Apr 23 2015

Other

Other	41st Conference on Infrared Technology and Applications
Country/Territory	United States
City	Baltimore
Period	4/20/15 → 4/23/15

Keywords

InAs/InAsSb
Infrared photodetector
Type-II superlattice

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.2177526

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Lin, ZY, Fan, J, Liu, S & Zhang, Y-H 2015, Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. in Proceedings of SPIE - The International Society for Optical Engineering. January edn, vol. 9451, 94510Q, SPIE, 41st Conference on Infrared Technology and Applications, Baltimore, United States, 4/20/15. https://doi.org/10.1117/12.2177526

@inproceedings{53e52446c19d4e70832c36fc54849799,

title = "Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices",

abstract = "This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm2 to 20 W/cm2. A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.",

keywords = "InAs/InAsSb, Infrared photodetector, Type-II superlattice",

author = "Lin, {Zhi Yuan} and Jin Fan and Shi Liu and Yong-Hang Zhang",

year = "2015",

doi = "10.1117/12.2177526",

language = "English (US)",

volume = "9451",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

edition = "January",

note = "41st Conference on Infrared Technology and Applications ; Conference date: 20-04-2015 Through 23-04-2015",

}

TY - GEN

T1 - Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

AU - Lin, Zhi Yuan

AU - Fan, Jin

AU - Liu, Shi

AU - Zhang, Yong-Hang

PY - 2015

Y1 - 2015

N2 - This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm2 to 20 W/cm2. A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

AB - This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm2 to 20 W/cm2. A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

KW - InAs/InAsSb

KW - Infrared photodetector

KW - Type-II superlattice

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U2 - 10.1117/12.2177526

DO - 10.1117/12.2177526

M3 - Conference contribution

AN - SCOPUS:84937232637

VL - 9451

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - 41st Conference on Infrared Technology and Applications

Y2 - 20 April 2015 through 23 April 2015

ER -

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

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