Photoluminescence studies of type-II CdSe/CdTe superlattices

Jing Jing Li; Leijun Yin; Shane Johnson; Brian Skromme; Shumin Wang; Xinyu Liu; Ding Ding; Cun-Zheng Ning; Jacek K. Furdyna; Yong-Hang Zhang

doi:10.1063/1.4745199

Photoluminescence studies of type-II CdSe/CdTe superlattices

Jing Jing Li, Leijun Yin, Shane Johnson, Brian Skromme, Shumin Wang, Xinyu Liu, Ding Ding, Cun-Zheng Ning, Jacek K. Furdyna, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

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Abstract

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schrödinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Original language	English (US)
Article number	061915
Journal	Applied Physics Letters
Volume	101
Issue number	6
DOIs	https://doi.org/10.1063/1.4745199
State	Published - Aug 6 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{329e1eb30c254b8797f6e46b6ab6b67d,

title = "Photoluminescence studies of type-II CdSe/CdTe superlattices",

abstract = "CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schr{\"o}dinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.",

author = "Li, {Jing Jing} and Leijun Yin and Shane Johnson and Brian Skromme and Shumin Wang and Xinyu Liu and Ding Ding and Cun-Zheng Ning and Furdyna, {Jacek K.} and Yong-Hang Zhang",

note = "Funding Information: This work was partially supported by the Science Foundation Arizona, Contract No. SRG 0339-08, the Air Force Research Laboratory/Space Vehicles Directorate, Contract No. FA9453-08-2-0228, and by NSF Grant ECCS-1002072. The authors would like to acknowledge Dr. Vijay D{\textquoteright}Costa for the ellipsometry measurements. ",

year = "2012",

month = aug,

day = "6",

doi = "10.1063/1.4745199",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Photoluminescence studies of type-II CdSe/CdTe superlattices

AU - Li, Jing Jing

AU - Yin, Leijun

AU - Johnson, Shane

AU - Skromme, Brian

AU - Wang, Shumin

AU - Liu, Xinyu

AU - Ding, Ding

AU - Ning, Cun-Zheng

AU - Furdyna, Jacek K.

AU - Zhang, Yong-Hang

N1 - Funding Information: This work was partially supported by the Science Foundation Arizona, Contract No. SRG 0339-08, the Air Force Research Laboratory/Space Vehicles Directorate, Contract No. FA9453-08-2-0228, and by NSF Grant ECCS-1002072. The authors would like to acknowledge Dr. Vijay D’Costa for the ellipsometry measurements.

PY - 2012/8/6

Y1 - 2012/8/6

N2 - CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schrödinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

AB - CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schrödinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

UR - http://www.scopus.com/inward/record.url?scp=84865142858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865142858&partnerID=8YFLogxK

U2 - 10.1063/1.4745199

DO - 10.1063/1.4745199

M3 - Article

AN - SCOPUS:84865142858

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061915

ER -

Photoluminescence studies of type-II CdSe/CdTe superlattices

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