Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

Rigo A. Carrasco; Christian P. Morath; Julie V. Logan; Kevin B. Woller; Perry C. Grant; Haylie Orozco; Marko S. Milosavljevic; Shane R. Johnson; Ganesh Balakrishnan; Preston T. Webster

doi:10.1063/5.0078809

Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

Rigo A. Carrasco, Christian P. Morath, Julie V. Logan, Kevin B. Woller, Perry C. Grant, Haylie Orozco, Marko S. Milosavljevic, Shane R. Johnson, Ganesh Balakrishnan, Preston T. Webster

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley-Read-Hall defect level and intrinsic doping concentration of the GaInAsSbBi.

Original language	English (US)
Article number	031102
Journal	Applied Physics Letters
Volume	120
Issue number	3
DOIs	https://doi.org/10.1063/5.0078809
State	Published - Jan 17 2022

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0078809

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title = "Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy",

abstract = "Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley-Read-Hall defect level and intrinsic doping concentration of the GaInAsSbBi.",

author = "Carrasco, {Rigo A.} and Morath, {Christian P.} and Logan, {Julie V.} and Woller, {Kevin B.} and Grant, {Perry C.} and Haylie Orozco and Milosavljevic, {Marko S.} and Johnson, {Shane R.} and Ganesh Balakrishnan and Webster, {Preston T.}",

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doi = "10.1063/5.0078809",

language = "English (US)",

volume = "120",

journal = "Applied Physics Letters",

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T1 - Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

AU - Carrasco, Rigo A.

AU - Morath, Christian P.

AU - Logan, Julie V.

AU - Woller, Kevin B.

AU - Grant, Perry C.

AU - Orozco, Haylie

AU - Milosavljevic, Marko S.

AU - Johnson, Shane R.

AU - Balakrishnan, Ganesh

AU - Webster, Preston T.

PY - 2022/1/17

Y1 - 2022/1/17

N2 - Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley-Read-Hall defect level and intrinsic doping concentration of the GaInAsSbBi.

AB - Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley-Read-Hall defect level and intrinsic doping concentration of the GaInAsSbBi.

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DO - 10.1063/5.0078809

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VL - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031102

ER -

Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

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