TY - JOUR
T1 - Photoemission Study of the Thermoelectric Group IV-VI van der Waals Crystals (GeS, SnS, and SnSe)
AU - Tołłoczko, Agata K.
AU - Zelewski, Szymon J.
AU - Ziembicki, Jakub
AU - Olszowska, Natalia
AU - Rosmus, Marcin
AU - Woźniak, Tomasz
AU - Tongay, Sefaattin
AU - Kudrawiec, Robert
N1 - Publisher Copyright:
© 2023 The Authors. Advanced Optical Materials published by Wiley-VCH GmbH.
PY - 2024/2/23
Y1 - 2024/2/23
N2 - Group IV-VI van der Waals crystals (MX, where M = Ge, Sn, and X = S, Se) are receiving increasing attention as semiconducting thermoelectric materials with nontoxic, earth-abundant composition. Among them, SnSe is considered the most promising as it exhibits a remarkably high thermoelectric figure of merit (ZT), initially attributed to its low lattice thermal conductivity. However, it has been shown that the electronic band structure plays an equally important role in thermoelectric performance. A certain band shape, described as a “pudding mold” and characteristic for all MXs, has been predicted to significantly improve ZT by combining good electrical conductivity with high Seebeck coefficient. This subtle feature is explored experimentally for GeS, SnS, and SnSe by means of angle-resolved photoemission spectroscopy. The technique also allows for the determination of the effective mass and Fermi level position of as-grown undoped crystals. The findings are supported by ab initio calculations of the electronic band structure. The results greatly contribute to the general understanding of the valence band dispersion of MXs and reinforce their potential as high-performance thermoelectric materials, additionally giving prospects for designing systems consisting of van der Waals heterostructures.
AB - Group IV-VI van der Waals crystals (MX, where M = Ge, Sn, and X = S, Se) are receiving increasing attention as semiconducting thermoelectric materials with nontoxic, earth-abundant composition. Among them, SnSe is considered the most promising as it exhibits a remarkably high thermoelectric figure of merit (ZT), initially attributed to its low lattice thermal conductivity. However, it has been shown that the electronic band structure plays an equally important role in thermoelectric performance. A certain band shape, described as a “pudding mold” and characteristic for all MXs, has been predicted to significantly improve ZT by combining good electrical conductivity with high Seebeck coefficient. This subtle feature is explored experimentally for GeS, SnS, and SnSe by means of angle-resolved photoemission spectroscopy. The technique also allows for the determination of the effective mass and Fermi level position of as-grown undoped crystals. The findings are supported by ab initio calculations of the electronic band structure. The results greatly contribute to the general understanding of the valence band dispersion of MXs and reinforce their potential as high-performance thermoelectric materials, additionally giving prospects for designing systems consisting of van der Waals heterostructures.
KW - ARPES
KW - photoemission
KW - thermoelectric materials
KW - van der Waals crystals
UR - http://www.scopus.com/inward/record.url?scp=85174403711&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85174403711&partnerID=8YFLogxK
U2 - 10.1002/adom.202302049
DO - 10.1002/adom.202302049
M3 - Article
AN - SCOPUS:85174403711
SN - 2195-1071
VL - 12
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 6
M1 - 2302049
ER -