As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.
ASJC Scopus subject areas
- General Physics and Astronomy