Phase-breaking time variations with temperature and current in an open quantum dot array

C. Prasad; A. Andresen; F. Ge; J. P. Bird; D. K. Ferry; L. H. Lin; N. Aoki; K. Nakao; Y. Ochiai; K. Ishibashi; Y. Aoyagi; T. Sugano

doi:10.1006/spmi.2000.0833

Phase-breaking time variations with temperature and current in an open quantum dot array

C. Prasad, A. Andresen, F. Ge, J. P. Bird, D. K. Ferry, L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Magnetic characterization of a quantum dot array was carried out to extract the phase-breaking time as a function of temperature and current. These measurements indicate a saturation of the phase-breaking time at low temperature and low current. The phase-breaking time varies as 1/T for temperatures above 1 K, which can be attributed to carrier-carrier scattering processes. Variation of the phase-breaking time with current yields an estimate for the electron temperature.

Original language	English (US)
Pages (from-to)	315-318
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0833
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0833

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@article{c2445c8f64c7442395e3cacda0864442,

title = "Phase-breaking time variations with temperature and current in an open quantum dot array",

abstract = "Magnetic characterization of a quantum dot array was carried out to extract the phase-breaking time as a function of temperature and current. These measurements indicate a saturation of the phase-breaking time at low temperature and low current. The phase-breaking time varies as 1/T for temperatures above 1 K, which can be attributed to carrier-carrier scattering processes. Variation of the phase-breaking time with current yields an estimate for the electron temperature.",

author = "C. Prasad and A. Andresen and F. Ge and Bird, {J. P.} and Ferry, {D. K.} and Lin, {L. H.} and N. Aoki and K. Nakao and Y. Ochiai and K. Ishibashi and Y. Aoyagi and T. Sugano",

note = "Funding Information: Acknowledgement—This work was supported by the Office of Naval Research.; 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

year = "2000",

month = may,

doi = "10.1006/spmi.2000.0833",

language = "English (US)",

volume = "27",

pages = "315--318",

journal = "Superlattices and Microstructures",

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publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Phase-breaking time variations with temperature and current in an open quantum dot array

AU - Prasad, C.

AU - Andresen, A.

AU - Ge, F.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Lin, L. H.

AU - Aoki, N.

AU - Nakao, K.

AU - Ochiai, Y.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Sugano, T.

N1 - Funding Information: Acknowledgement—This work was supported by the Office of Naval Research.

PY - 2000/5

Y1 - 2000/5

N2 - Magnetic characterization of a quantum dot array was carried out to extract the phase-breaking time as a function of temperature and current. These measurements indicate a saturation of the phase-breaking time at low temperature and low current. The phase-breaking time varies as 1/T for temperatures above 1 K, which can be attributed to carrier-carrier scattering processes. Variation of the phase-breaking time with current yields an estimate for the electron temperature.

AB - Magnetic characterization of a quantum dot array was carried out to extract the phase-breaking time as a function of temperature and current. These measurements indicate a saturation of the phase-breaking time at low temperature and low current. The phase-breaking time varies as 1/T for temperatures above 1 K, which can be attributed to carrier-carrier scattering processes. Variation of the phase-breaking time with current yields an estimate for the electron temperature.

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U2 - 10.1006/spmi.2000.0833

DO - 10.1006/spmi.2000.0833

M3 - Conference article

AN - SCOPUS:0034187809

SN - 0749-6036

VL - 27

SP - 315

EP - 318

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Phase-breaking time variations with temperature and current in an open quantum dot array

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