Phase-breaking time variations with temperature and current in an open quantum dot array

C. Prasad, A. Andresen, F. Ge, J. P. Bird, D. K. Ferry, L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Magnetic characterization of a quantum dot array was carried out to extract the phase-breaking time as a function of temperature and current. These measurements indicate a saturation of the phase-breaking time at low temperature and low current. The phase-breaking time varies as 1/T for temperatures above 1 K, which can be attributed to carrier-carrier scattering processes. Variation of the phase-breaking time with current yields an estimate for the electron temperature.

Original languageEnglish (US)
Pages (from-to)315-318
Number of pages4
JournalSuperlattices and Microstructures
Issue number5
StatePublished - May 2000
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: Dec 6 1999Dec 10 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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