Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Jianping Liu; Yun Zhang; Zachary Lochner; Seong Soo Kim; Hyunsoo Kim; Jae Hyun Ryou; Shyh Chiang Shen; P. Doug Yoder; Russell D. Dupuis; Qiyuan Wei; Kewei Sun; Alec Fischer; Fernando Ponce

doi:10.1117/12.842334

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Jianping Liu, Yun Zhang, Zachary Lochner, Seong Soo Kim, Hyunsoo Kim, Jae Hyun Ryou, Shyh Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan Wei, Kewei Sun, Alec Fischer, Fernando Ponce

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Blue laser diode (LD) structures with GaN waveguide layers and with In _0.03Ga_0.97N waveguide layers were grown. A comparison study showed In_0.03Ga_0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In_0.03Ga_0.97N waveguide layers.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices V
DOIs	https://doi.org/10.1117/12.842334
State	Published - 2010
Event	Gallium Nitride Materials and Devices V - San Francisco, CA, United States Duration: Jan 25 2010 → Jan 28 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7602
ISSN (Print)	0277-786X

Other

Other	Gallium Nitride Materials and Devices V
Country/Territory	United States
City	San Francisco, CA
Period	1/25/10 → 1/28/10

Keywords

InGaN waveguide layers
Laser diodes
Metalorganic chemical vapor deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.842334

Cite this

Liu, J., Zhang, Y., Lochner, Z., Kim, S. S., Kim, H., Ryou, J. H., Shen, S. C., Yoder, P. D., Dupuis, R. D., Wei, Q., Sun, K., Fischer, A., & Ponce, F. (2010). Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. In Gallium Nitride Materials and Devices V Article 760219 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7602). https://doi.org/10.1117/12.842334

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. / Liu, Jianping; Zhang, Yun; Lochner, Zachary et al.
Gallium Nitride Materials and Devices V. 2010. 760219 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7602).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, J, Zhang, Y, Lochner, Z, Kim, SS, Kim, H, Ryou, JH, Shen, SC, Yoder, PD, Dupuis, RD, Wei, Q, Sun, K, Fischer, A & Ponce, F 2010, Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. in Gallium Nitride Materials and Devices V., 760219, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7602, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, 1/25/10. https://doi.org/10.1117/12.842334

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title = "Performance improvement of InGaN-based laser diodes by epitaxial layer structure design",

abstract = "Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.",

keywords = "InGaN waveguide layers, Laser diodes, Metalorganic chemical vapor deposition",

author = "Jianping Liu and Yun Zhang and Zachary Lochner and Kim, {Seong Soo} and Hyunsoo Kim and Ryou, {Jae Hyun} and Shen, {Shyh Chiang} and Yoder, {P. Doug} and Dupuis, {Russell D.} and Qiyuan Wei and Kewei Sun and Alec Fischer and Fernando Ponce",

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doi = "10.1117/12.842334",

language = "English (US)",

isbn = "9780819479983",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Liu, Jianping

AU - Zhang, Yun

AU - Lochner, Zachary

AU - Kim, Seong Soo

AU - Kim, Hyunsoo

AU - Ryou, Jae Hyun

AU - Shen, Shyh Chiang

AU - Yoder, P. Doug

AU - Dupuis, Russell D.

AU - Wei, Qiyuan

AU - Sun, Kewei

AU - Fischer, Alec

AU - Ponce, Fernando

PY - 2010

Y1 - 2010

N2 - Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.

AB - Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.

KW - InGaN waveguide layers

KW - Laser diodes

KW - Metalorganic chemical vapor deposition

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices V

T2 - Gallium Nitride Materials and Devices V

Y2 - 25 January 2010 through 28 January 2010

ER -

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Abstract

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Keywords

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