Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP

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We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

Original languageEnglish (US)
Pages (from-to)743-750
Number of pages8
JournalVLSI Design
Issue number4
StatePublished - Dec 2002


  • Cellular automaton
  • Charge transport modeling
  • GaAs
  • Monte Carlo
  • Semiconductors
  • Si

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering


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