Partial and total α parameters in semiconductor optical devices

C. Z. Ning

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.

Original languageEnglish (US)
Pages (from-to)1887-1889
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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