Abstract
A low temperature (180 °C) Indium Zinc Oxide thin film transistor process compatible with flexible substrates and integrated source drivers for electrophoretic displays using these IZO TFTs has been developed at the Flexible Display Center. Initial stress tests show improved threshold voltage stability compared to amorphous silicon TFTs.
| Original language | English (US) |
|---|---|
| Title of host publication | Digest of Technical Papers - SID International Symposium |
| Pages | 1301-1303 |
| Number of pages | 3 |
| Volume | 41 1 |
| State | Published - May 2010 |
ASJC Scopus subject areas
- Engineering(all)