Overshoot velocity in ultra-broadband THz studies in GaAs and InP

Marco Saraniti, Y. Hu, Stephen Goodnick, S. J. Wigger

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has been motivated by the recent availability of experimental measures of the THz radiation generated by transient acceleration of photogenerated charge carriers in pin diode structures. The fullband code used in this study includes the full energy-momentum dispersion relation of electrons and holes as well as the full dispersion for the relevant phonons. Here we use this code for the simulation of high-field transient transport in bulk GaAs, InP, and for the experimental pin structure, where favorable comparison is found with the velocities measured from the transient THz radiatn after ultrafast excitation.

Original languageEnglish (US)
Pages (from-to)162-165
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Mar 2002


  • Charge transport modeling
  • GaAs
  • InP
  • Monte Carlo

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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