Various radiation hardened by design SRAM cells are explored for their size, electrical performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing on 130-and 90-nm transistors and SRAM arrays show that SRAM cells using two-edge transistors, NMOS access transistors, and NMOS reverse-body-bias effectively mitigate TID in both generations. This work experimentally demonstrates that commercial foundry (optimally sized) SRAM cells can be used in radiation hardening by design if NMOS reverse-body bias is used for TID mitigation.
- Integrated circuit radiation effects
- Radiation hardening
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering