Optimization of In2Se3/Si(111) heteroepitaxy to enable Bi2Se3/In2Se3 bilayer growth

Somilkumar J. Rathi, David Smith, Jeffery Drucker

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Systematic optimization of molecular beam epitaxy growth parameters enabled high quality heteroepitaxy of In2Se3 on Si(111) surfaces. Surfaces of the best epilayers were characterized by atomically flat terraces that extended laterally for several hundred nanometers. These terraces were separated by single quintuple layer high steps. These In2Se 3 films were suitable for subsequent high quality epitaxy of Bi 2Se3. The quality of the In2Se 3/Bi2Se3 interface was confirmed using atomic resolution transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)4617-4623
Number of pages7
JournalCrystal Growth and Design
Issue number9
StatePublished - Sep 3 2014

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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