@inproceedings{47f5765ecb214287aed15e88f5a8eb36,
title = "Optical spectroscopy of polytypic quantum wells in SiC",
abstract = "Optical characterization is used to study spontaneously formed polytypic quantum well structures in lightly doped epilayers on heavily doped ([N] > 3×1019 cm-3) 4H-SiC substrates. Low temperature (1.8 K) photoluminescence (PL) shows emission from the wells in both epilayer and substrate, the latter occurring at higher energy. A self-consistent model of the quantum wells including polarization charge is used to explain the results. Raman scattering data provide direct evidence of depletion of the 4H barriers in the substrate due to modulation doping into these wells.",
author = "G. Samson and L. Chen and Brian Skromme and R. Wang and C. Li and I. Bhat",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994442",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "989--990",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}