Optical spectroscopy of Bi containing semiconductors

A. Chernikov, S. Chatterjee, M. Koch, C. Bückers, S. W. Koch, S. Imhof, A. Thränhardt, Xianfeng Lu, S. R. Johnson, D. A. Beaton, T. Tiedje

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528896
StatePublished - 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701


OtherConference on Lasers and Electro-Optics, CLEO 2010
Country/TerritoryUnited States
CitySan Jose, CA

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics


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