Optical properties of vanadium dioxide grown on sapphire substrate with dd7ferent oreentations

M. Nazari; Y. Zhao; Y. Zhu; V. V. Kuryatkov; Z. Y. Fan; A. A. Bernussi; M. Holtz

doi:10.1002/9781118663547.ch116

Optical properties of vanadium dioxide grown on sapphire substrate with dd7ferent oreentations

M. Nazari, Y. Zhao, Y. Zhu, V. V. Kuryatkov, Z. Y. Fan, A. A. Bernussi, M. Holtz

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

We report optical, structural, and electrical properties of VO₂ on sapphire substrates with c-, m-and r- orientations with identical growth conditions. XRD data show that VO₂ orientation depends on the substrate orientation. Based on temperature-dependent resistivity measurements, metal-insulator phase transition (MIT) temperature, T_MIT, depends on the VO₂ orientation due, primarily, to stress. The energy gap E_g is observed to gradually red shift as temperature increases before collapsing to E_g ≈ 0 eV at temperatures below T_MIT.

Original language	English (US)
Title of host publication	TMS 2013 142nd Annual Meeting and Exhibition, Annual Meeting
Publisher	Wiley-Blackwell
Pages	933-940
Number of pages	8
ISBN (Electronic)	9781118663547
ISBN (Print)	9781118605813
DOIs	https://doi.org/10.1002/9781118663547.ch116
State	Published - Jan 1 2013
Externally published	Yes

Keywords

And refractive index
Energy gap
Metal-insulator phase transition (MIT)
Spectroscopic ellipsometry

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

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10.1002/9781118663547.ch116

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title = "Optical properties of vanadium dioxide grown on sapphire substrate with dd7ferent oreentations",

abstract = "We report optical, structural, and electrical properties of VO2 on sapphire substrates with c-, m-and r- orientations with identical growth conditions. XRD data show that VO2 orientation depends on the substrate orientation. Based on temperature-dependent resistivity measurements, metal-insulator phase transition (MIT) temperature, TMIT, depends on the VO2 orientation due, primarily, to stress. The energy gap Eg is observed to gradually red shift as temperature increases before collapsing to Eg ≈ 0 eV at temperatures below TMIT.",

keywords = "And refractive index, Energy gap, Metal-insulator phase transition (MIT), Spectroscopic ellipsometry",

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doi = "10.1002/9781118663547.ch116",

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T1 - Optical properties of vanadium dioxide grown on sapphire substrate with dd7ferent oreentations

AU - Nazari, M.

AU - Zhao, Y.

AU - Zhu, Y.

AU - Kuryatkov, V. V.

AU - Fan, Z. Y.

AU - Bernussi, A. A.

AU - Holtz, M.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We report optical, structural, and electrical properties of VO2 on sapphire substrates with c-, m-and r- orientations with identical growth conditions. XRD data show that VO2 orientation depends on the substrate orientation. Based on temperature-dependent resistivity measurements, metal-insulator phase transition (MIT) temperature, TMIT, depends on the VO2 orientation due, primarily, to stress. The energy gap Eg is observed to gradually red shift as temperature increases before collapsing to Eg ≈ 0 eV at temperatures below TMIT.

AB - We report optical, structural, and electrical properties of VO2 on sapphire substrates with c-, m-and r- orientations with identical growth conditions. XRD data show that VO2 orientation depends on the substrate orientation. Based on temperature-dependent resistivity measurements, metal-insulator phase transition (MIT) temperature, TMIT, depends on the VO2 orientation due, primarily, to stress. The energy gap Eg is observed to gradually red shift as temperature increases before collapsing to Eg ≈ 0 eV at temperatures below TMIT.

KW - And refractive index

KW - Energy gap

KW - Metal-insulator phase transition (MIT)

KW - Spectroscopic ellipsometry

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DO - 10.1002/9781118663547.ch116

M3 - Chapter

AN - SCOPUS:85018861967

SN - 9781118605813

SP - 933

EP - 940

BT - TMS 2013 142nd Annual Meeting and Exhibition, Annual Meeting

PB - Wiley-Blackwell

ER -

Optical properties of vanadium dioxide grown on sapphire substrate with dd7ferent oreentations

Abstract

Keywords

ASJC Scopus subject areas

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