Optical properties of GaN nanowhiskers produced by photoelectrochemical etching

R. Geiss; H. M. Ng; A. Chowdhury; A. M. Sergent; S. Srinivasan; Fernando Ponce

doi:10.1149/1.2357232

Optical properties of GaN nanowhiskers produced by photoelectrochemical etching

R. Geiss, H. M. Ng, A. Chowdhury, A. M. Sergent, S. Srinivasan, Fernando Ponce

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The optical properties of GaN nanowhiskers with average diameters of 10 to 20 nm formed by photoelectrochemical etching were investigated using photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and imaging. The main donor-bound exciton peak of the etched sample showed a red-shift of 9 meV compared to the unetched sample. CL mapping revealed that the luminescence originated from the surrounding matrix of GaN while the nanowhiskers themselves were non-radiative. copyright The Electrochemical Society.

Original language	English (US)
Title of host publication	State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7
Publisher	Electrochemical Society Inc.
Pages	415-419
Number of pages	5
Edition	5
ISBN (Electronic)	1566775051
DOIs	https://doi.org/10.1149/1.2357232
State	Published - 2006
Event	State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

Publication series

Name	ECS Transactions
Number	5
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	10/29/06 → 11/3/06

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.2357232

Cite this

Geiss, R., Ng, H. M., Chowdhury, A., Sergent, A. M., Srinivasan, S., & Ponce, F. (2006). Optical properties of GaN nanowhiskers produced by photoelectrochemical etching. In State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 (5 ed., pp. 415-419). (ECS Transactions; Vol. 3, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1.2357232

Optical properties of GaN nanowhiskers produced by photoelectrochemical etching. / Geiss, R.; Ng, H. M.; Chowdhury, A. et al.
State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7. 5. ed. Electrochemical Society Inc., 2006. p. 415-419 (ECS Transactions; Vol. 3, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Geiss, R, Ng, HM, Chowdhury, A, Sergent, AM, Srinivasan, S & Ponce, F 2006, Optical properties of GaN nanowhiskers produced by photoelectrochemical etching. in State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7. 5 edn, ECS Transactions, no. 5, vol. 3, Electrochemical Society Inc., pp. 415-419, State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting, Cancun, Mexico, 10/29/06. https://doi.org/10.1149/1.2357232

Geiss R, Ng HM, Chowdhury A, Sergent AM, Srinivasan S, Ponce F. Optical properties of GaN nanowhiskers produced by photoelectrochemical etching. In State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7. 5 ed. Electrochemical Society Inc. 2006. p. 415-419. (ECS Transactions; 5). doi: 10.1149/1.2357232

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abstract = "The optical properties of GaN nanowhiskers with average diameters of 10 to 20 nm formed by photoelectrochemical etching were investigated using photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and imaging. The main donor-bound exciton peak of the etched sample showed a red-shift of 9 meV compared to the unetched sample. CL mapping revealed that the luminescence originated from the surrounding matrix of GaN while the nanowhiskers themselves were non-radiative. copyright The Electrochemical Society.",

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AB - The optical properties of GaN nanowhiskers with average diameters of 10 to 20 nm formed by photoelectrochemical etching were investigated using photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and imaging. The main donor-bound exciton peak of the etched sample showed a red-shift of 9 meV compared to the unetched sample. CL mapping revealed that the luminescence originated from the surrounding matrix of GaN while the nanowhiskers themselves were non-radiative. copyright The Electrochemical Society.

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Optical properties of GaN nanowhiskers produced by photoelectrochemical etching

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