Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S. C Y Tsen, David Smith, D. C. Reynolds, D. C. Look, K. Evans, C. W. Litton, W. C. Mitchel, P. Hemenger

Research output: Contribution to journalArticlepeer-review

95 Scopus citations


High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3.

Original languageEnglish (US)
Pages (from-to)467-469
Number of pages3
JournalApplied Physics Letters
Issue number4
StatePublished - Jan 27 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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