We demonstrate the integration of vertical-cavity surface-emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8×8 flip-chip bonded InGaAs (980 nm) VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2×4 GaAs (850 nm) VCSEL array was indirectly flip-chip bonded to a Si substrate via a transparent glass carrier and package-limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages8
StatePublished - 1999
EventProceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III - San Jose, CA, USA
Duration: Jan 28 1999Jan 29 1999


OtherProceedings of the 1999 Optoelectornic Integrated Circuits and Packaging III
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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