Abstract
We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.
Original language | English (US) |
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Pages (from-to) | 1198-1201 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 56 |
Issue number | 11 |
DOIs | |
State | Published - 1986 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy