One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction

T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, G. J. Davies

Research output: Contribution to journalArticlepeer-review

537 Scopus citations


We present results on the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to the conductivity. We find that the temperature dependence of the phase relaxation length is in agreement with a recent theory based on scattering by electromagnetic fluctuations. Beyond the regime of quantum interference the conductivity varies with temperature as T2.

Original languageEnglish (US)
Pages (from-to)1198-1201
Number of pages4
JournalPhysical Review Letters
Issue number11
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'One-dimensional conduction in the 2D electron gas of a GaAs-AlGaAs heterojunction'. Together they form a unique fingerprint.

Cite this