TY - JOUR
T1 - On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem
AU - Heitzinger, Clemens
AU - Selberherr, Siegfried
N1 - Funding Information:
The authors acknowledge support from the ‘Christian Doppler Forschungsgesellschaft’, Vienna, Austria. They would also like to acknowledge the contributions of M. Kimura and M. Matsumura (Sony Hon-Atsugi Technology Center, Hon-Atsugi, Tokyo, Japan), who originally posed the problem.
PY - 2004/2
Y1 - 2004/2
N2 - The formation and dissolution of silicon self-interstitial clusters is linked to the phenomenon of transient-enhanced diffusion (TED) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step, a model for the formation and dissolution of self-interstitial clusters is presented including the adjusted model parameters for two different technologies (i.e. material parameter sets). In order to automate the inverse modeling part, a general optimization framework was used. In addition to solving this problem, the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally, the results are discussed and compared with a previous model.
AB - The formation and dissolution of silicon self-interstitial clusters is linked to the phenomenon of transient-enhanced diffusion (TED) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step, a model for the formation and dissolution of self-interstitial clusters is presented including the adjusted model parameters for two different technologies (i.e. material parameter sets). In order to automate the inverse modeling part, a general optimization framework was used. In addition to solving this problem, the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally, the results are discussed and compared with a previous model.
KW - Diffusion processes
KW - Inverse problems
KW - Silicon self-interstitial clusters
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U2 - 10.1016/j.mejo.2003.09.014
DO - 10.1016/j.mejo.2003.09.014
M3 - Article
AN - SCOPUS:0347985160
SN - 0026-2692
VL - 35
SP - 167
EP - 171
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 2
ER -