Abstract
The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al2 O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.
Original language | English (US) |
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Article number | 161902 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 16 |
DOIs | |
State | Published - Oct 18 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)