TY - GEN
T1 - Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature
AU - Mathews, J.
AU - Li, Z.
AU - Zhao, Y.
AU - Gallagher, J. D.
AU - Lombardo, D.
AU - Agha, I.
AU - Kouvetakis, John
AU - Menendez, Jose
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/9/5
Y1 - 2018/9/5
N2 - Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.
AB - Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.
UR - http://www.scopus.com/inward/record.url?scp=85054159288&partnerID=8YFLogxK
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U2 - 10.1109/PHOSST.2018.8456690
DO - 10.1109/PHOSST.2018.8456690
M3 - Conference contribution
AN - SCOPUS:85054159288
SN - 9781538653432
T3 - IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
SP - 35
EP - 36
BT - IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
Y2 - 9 July 2018 through 11 July 2018
ER -