Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices

Chi Yin Cheng; Dragica Vasileska

doi:10.23919/SISPAD49475.2020.9241605

Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices

Chi Yin Cheng, Dragica Vasileska

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we present a novel full-band Monte Carlo device simulator for modelling 4H-SiC Power electronic devices in which, for the first time, we use real-space molecular dynamics approach for the Coulomb interactions. Proper treatment of the electron-electron interactions is critical for modelling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain the steady-state behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.

Original language	English (US)
Title of host publication	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	149-152
Number of pages	4
ISBN (Electronic)	9784863487635
DOIs	https://doi.org/10.23919/SISPAD49475.2020.9241605
State	Published - Sep 23 2020
Event	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan Duration: Sep 3 2020 → Oct 6 2020

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2020-September

Conference

Conference	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Country/Territory	Japan
City	Virtual, Kobe
Period	9/3/20 → 10/6/20

Keywords

4H-SiC
Full-band device simulator
Monte Carlo Method
Real-space treatment of Coulomb interactions
Vertical double-diffused MOSFET (VDMOS)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.23919/SISPAD49475.2020.9241605

Cite this

Cheng, C. Y., & Vasileska, D. (2020). Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices. In 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (pp. 149-152). Article 9241605 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2020-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD49475.2020.9241605

Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices. / Cheng, Chi Yin; Vasileska, Dragica.
2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 149-152 9241605 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2020-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheng, CY & Vasileska, D 2020, Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices. in 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020., 9241605, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2020-September, Institute of Electrical and Electronics Engineers Inc., pp. 149-152, 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020, Virtual, Kobe, Japan, 9/3/20. https://doi.org/10.23919/SISPAD49475.2020.9241605

Cheng CY, Vasileska D. Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices. In 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 149-152. 9241605. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD49475.2020.9241605

Cheng, Chi Yin ; Vasileska, Dragica. / Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices. 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 149-152 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "In this work, we present a novel full-band Monte Carlo device simulator for modelling 4H-SiC Power electronic devices in which, for the first time, we use real-space molecular dynamics approach for the Coulomb interactions. Proper treatment of the electron-electron interactions is critical for modelling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain the steady-state behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.",

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Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this