Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Hanxiao Liu; Houqiang Fu; Kai Fu; Shanthan R. Alugubelli; Po Yi Su; Yuji Zhao; Fernando Ponce

doi:10.1063/1.5088168

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Hanxiao Liu, Houqiang Fu, Kai Fu, Shanthan R. Alugubelli, Po Yi Su, Yuji Zhao, Fernando Ponce

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. This observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.

Original language	English (US)
Article number	082102
Journal	Applied Physics Letters
Volume	114
Issue number	8
DOIs	https://doi.org/10.1063/1.5088168
State	Published - Feb 25 2019

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5088168

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title = "Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics",

abstract = "A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. This observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.",

author = "Hanxiao Liu and Houqiang Fu and Kai Fu and Alugubelli, {Shanthan R.} and Su, {Po Yi} and Yuji Zhao and Fernando Ponce",

note = "Funding Information: This work was supported by the ARPA-E PNDIODES Program monitored by Dr. Isik Kizilyalli. We acknowledge the use of facilities within the Eyring Materials Center at Arizona State University. The device fabrication was performed at the Center for Solid State Electronics Research at Arizona State University. Access to the NanoFab was supported, in part, by NSF Contract No. ECCS-1542160. Publisher Copyright: {\textcopyright} 2019 Author(s).",

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AU - Liu, Hanxiao

AU - Fu, Houqiang

AU - Fu, Kai

AU - Alugubelli, Shanthan R.

AU - Su, Po Yi

AU - Zhao, Yuji

AU - Ponce, Fernando

N1 - Funding Information: This work was supported by the ARPA-E PNDIODES Program monitored by Dr. Isik Kizilyalli. We acknowledge the use of facilities within the Eyring Materials Center at Arizona State University. The device fabrication was performed at the Center for Solid State Electronics Research at Arizona State University. Access to the NanoFab was supported, in part, by NSF Contract No. ECCS-1542160. Publisher Copyright: © 2019 Author(s).

PY - 2019/2/25

Y1 - 2019/2/25

N2 - A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. This observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.

AB - A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. This observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.

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Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

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