Abstract
Photoreflectance studies of a series of GaAs1-xNx samples with x≤0.01 were discussed. Nitrogen activated bowing parameter was studied. It was found that the composition dependent bowing parameter of the band gap is same as obtained from first principle supercell calculations.
Original language | English (US) |
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Pages (from-to) | 291-296 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 48 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2004 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry